Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
AAEON Technology
|
AEC-6977 |
244Kb/2P |
built-in tpm |
SPANSION
|
S6E2H4 |
3Mb/159P |
fpu built-in |
Shenzhen Huazhimei Semi...
|
HM5521AMR |
1Mb/9P |
built-in MOSFET |
AVAGO TECHNOLOGIES LIMI...
|
9286-8E |
608Kb/2P |
Built on MegaRAID |
SPANSION
|
S6E2HG |
4Mb/161P |
fpu built-in |
Shenzhen Huazhimei Semi...
|
HM5521A |
1Mb/9P |
built-in MOSFET |
MOSDESIGN SEMICONDUCTOR...
|
M18109A |
26Kb/2P |
Built-in oscillator 2005-03-08 |
Sangdest Microelectroni...
|
SDD860 |
147Kb/4P |
Built Strain Relief |
SPANSION
|
S6E2HE |
4Mb/163P |
fpu built-in |
List of Unclassifed Man...
|
M18109A |
28Kb/2P |
Built-in oscillator. |
Sanken electric
|
SAP09N |
46Kb/1P |
BUILT-IN TEMPERATURE COMPENSATION DIODES / BUILT-IN EMITTER RESISTOR DARLINGTON |
Shenzhen Huazhimei Semi...
|
HM5518A |
2Mb/9P |
Built-in high-precision voltage detection circuit built-in MOSFET |
HM5428A |
573Kb/7P |
Built-in high-precision voltage detection circuit built-in MOSFET |
Rohm
|
BU97530KVT |
1Mb/59P |
Built-in OSC circuit |
Shindengen Electric Mfg...
|
MTD2017F |
91Kb/5P |
Built-in 9-circuits |
Seiko Instruments Inc
|
S-19101C25H-M5T2U |
1Mb/31P |
BUILT-IN DELAY CIRCUIT |
S-19100N12A-M5T2U |
2Mb/39P |
BUILT-IN DELAY CIRCUIT |
SamHop Microelectronics...
|
SM7186 |
185Kb/10P |
Built-in adjustable OSC |
Hotchip Technology Co.,...
|
HT3582DM |
1,004Kb/6P |
Built-in reference source |
SeCoS Halbleitertechnol...
|
SMUN52XXDW |
483Kb/8P |
Built-in Resistors Transistor |