Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Vishay Siliconix
|
TLHE44R1S2-26 |
106Kb/5P |
AlInGaP technology Rev. 1.4, 14-Oct-14 |
TLHE42T2V1 |
107Kb/5P |
AlInGaP technology Rev. 1.2, 14-Oct-14 |
TLLE4401 |
110Kb/6P |
AlInGaP technology Rev. 1.5, 14-Oct-14 |
IRF1405SLPBF |
313Kb/11P |
Advanced Process Technology |
VLWW960 |
251Kb/9P |
Utilizing InGaN technology Rev. 1.1, 05-Mar-08 |
IRF3805SLPBF |
394Kb/12P |
Advanced Process Technology |
IRFL4105TRPBF |
163Kb/9P |
Advanced Process Technology |
VS-GT105LA120UX |
190Kb/9P |
Trench IGBT technology Revision: 17-Oct-16 |
IRF6215RLPBF |
998Kb/11P |
Advanced Process Technology |
TLHB44K2M1 |
104Kb/5P |
GaN on SiC technology Rev. 1.2, 14-Oct-14 |
V10P20 |
90Kb/5P |
Trench MOS Schottky technology Revision: 17-Feb-17 |
VLMW322 |
217Kb/8P |
High efficient INGaN technology Rev. 1.3, 16-May-13 |
V15PL50 |
756Kb/5P |
Trench MOS Schottky technology Revision: 02-Jul-13 |
V25PL60-M3 |
82Kb/5P |
Trench MOS Schottky technology Revision: 15-May-14 |
VS-GP100TS60SFPBF |
220Kb/9P |
Trench PT IGBT technology Revision: 11-Jun-15 |
V8P6-M3 |
103Kb/5P |
Trench MOS Schottky technology Revision: 07-Mar-17 |
V15P6-M3 |
96Kb/5P |
Trench MOS Schottky technology Revision: 09-Jan-17 |
VLMW41 |
181Kb/8P |
High efficient InGaN technology Rev. 1.8, 03-Aug-15 |
VLMW45R1S1-5K6L-08 |
182Kb/8P |
High efficient InGaN technology Rev. 1.4, 03-Aug-15 |
V20PL50-M3 |
82Kb/5P |
Trench MOS Schottky technology Revision: 15-May-14 |