| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Toshiba Semiconductor
|
MG15J6ES40 |
524Kb/5P |
INSULATED GATE BIPOLAR TRANSISTOR |
| MG300Q1US11 |
395Kb/5P |
INSULATED GATE BIPOLAR TRANSISTOR |
| MP6753 |
197Kb/5P |
INSULATED GATE BIPOLAR TRANSISTOR |
| GT15J121 |
102Kb/2P |
Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT |
| GT30J324 |
166Kb/7P |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
| GT40T301 |
311Kb/6P |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
| GT60N321 |
173Kb/6P |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
| GT60M303 |
426Kb/6P |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT |
| GT40T302 |
173Kb/6P |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
| GT8G132 |
338Kb/6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
| GT60M323 |
193Kb/6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
| GT20J101 |
259Kb/6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
| GT15M321 |
269Kb/6P |
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT |
| GT60M322 |
191Kb/6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
| GT15Q311 |
172Kb/7P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
| GT40G121 |
151Kb/5P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
| GT80J101B |
69Kb/6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
| GT50G321 |
287Kb/6P |
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT |
| GT10J321 |
158Kb/6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT |
| GT50J325 |
170Kb/7P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
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