Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Leshan Radio Company
|
LR358 |
202Kb/9P |
Large Voltage Gain |
LR324 |
223Kb/10P |
Internally Frequency Compensated, Large Voltage Gain |
LR358 |
202Kb/9P |
Internally Frequency Compensation Large Voltage Gain |
LR324 |
223Kb/10P |
Internally Frequency Compensated Large Voltage Gain |
L2SC5635LT1G |
1Mb/3P |
High-Frequency Amplifier Transistor High gain,low noise |
L2SC3838QLT1G |
71Kb/2P |
High-Frequency Amplifier Transistor Small rbb Cc and high gain. |
LA7129S |
770Kb/7P |
Ultra low noise figure(NF)=1.0dB; High power gain=32.0dB; |
L2SC3837LT1G |
65Kb/2P |
High-Frequency Amplifier Transistor Small rbb Cc and high gain |
L2SC3837T1G |
87Kb/2P |
High-Frequency Amplifier Transistor Small rbb Cc and high gain |
L2SD2114KVLT1G |
72Kb/4P |
Epitaxial planar type NPN silicon transistor High DC current gain |
L2SC3837QLT1G |
71Kb/2P |
High-Frequency Amplifier Transistor Small rbb Cc and high gain. |
L2SC3838LT1G |
70Kb/2P |
High-Frequency Amplifier Transistor Small rbb Cc and high gain. |
LA7126D |
580Kb/7P |
Ultra-low noise figure(NF)=0.65dB; High power gain=18.0dB; |