Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
California Eastern Labs
|
UPC8204TK |
720Kb/4P |
NECs VARIABLE GAIN AMPLIFIER |
MC-7842 |
31Kb/2P |
HIGH GAIN CATV POWER DOUBLER AMPLIFIER |
NE021 |
184Kb/12P |
HIGH INSERTION GAIN: 18.5 dB at 500 MHz |
NESG2046M33 |
292Kb/4P |
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION |
NESG204619 |
320Kb/4P |
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION |
NE3520S03 |
505Kb/10P |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain |
NE3521M04 |
653Kb/9P |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain |
NE3513M04 |
1Mb/9P |
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain |
NE3516S02 |
333Kb/9P |
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain |
NE3503M04 |
394Kb/7P |
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET |
NESG210719 |
1Mb/9P |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG) |
NESG2021M16 |
861Kb/11P |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) |
NE66219 |
329Kb/6P |
NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) |
NESG3031M05-T1-A |
673Kb/9P |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) |