Datenblatt-Suchmaschine für elektronische Bauteile |
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950-2150MHZ Datenblatt, PDF |
Gesuchtes Schlüsselwort : '950-2150MHz' - Total: 176 (1/9) Pages |
Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
WALSIN TECHNOLOGY CORPO... |
RFHPF3225170F07B1U |
583Kb/7P |
950~2150MHz Band RF Application |
RFHPF3225170F0T |
605Kb/7P |
950~2150MHz Band RF Application | |
Mini-Circuits |
ZABT-2R15G |
229Kb/3P |
Bias -Tee / Diplexer 50廓 10 to 2150MHz (10MHz, 950-2150MHz) |
Soshin electric Co., Lt... |
ARP-481400-G1 |
262Kb/3P |
3dB 90deg hybrid for 2150MHz |
HMD814D-HYB2150 |
262Kb/3P |
3dB 90deg hybrid for 2150MHz | |
TRIAD MAGNETICS |
FP12-950 |
43Kb/1P |
FP12-950 |
Tyco Electronics |
MABA-007731-CT1980 |
112Kb/3P |
1:1 Transmission Line Transformer 50-2150MHz |
M/A-COM Technology Solu... |
MABA-007731-CT1980 |
99Kb/3P |
1:1 Transmission Line Transformer 50-2150MHz |
Siemens Semiconductor G... |
SFH4510 |
58Kb/6P |
GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm |
KR Electronics, Inc. |
3078-950 |
75Kb/3P |
950 MHz Bandpass Filter |
Infineon Technologies A... |
SFH4200 |
81Kb/7P |
Schnelle GaAs-IR-Lumineszenzdiode (950 nm),High-Speed GaAs Infrared Emitter (950 nm) 2000-01-01 |
Vishay Siliconix |
TSUS4300 |
110Kb/5P |
Infrared Emitting Diode, 950 nm, GaAs Rev. 1.9, 20-Oct-15 |
TSKS5400 |
144Kb/5P |
Infrared Emitting Diode, 950 nm, GaAs Rev. 2.4, 03-Sep-13 |
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Texas Instruments |
CC1190 |
472Kb/15P |
850 - 950 MHz RF Front End |
Vishay Siliconix |
CQY37N |
281Kb/5P |
Infrared Emitting Diode, 950 nm, GaAs 01-Jan-2022 |
TSUS5200 |
112Kb/5P |
Infrared Emitting Diode, 950 nm, GaAs Rev. 2.2, 29-Jun-09 |
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STMicroelectronics |
STW22N95K5 |
884Kb/14P |
Automotive-grade N-channel 950 V March 2014 Rev 3 |
Vishay Siliconix |
TSUS6202 |
109Kb/5P |
Infrared Emitting Diode, 950 nm, GaAs Rev. 1.0, 29-Sep-15 |
TSUS5200 |
109Kb/5P |
Infrared Emitting Diode, 950 nm, GaAs Rev. 2.3, 24-Aug-11 |
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TSUS4400 |
113Kb/5P |
Infrared Emitting Diode, 950 nm, GaAs 01-Jan-2021 |
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