Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Renesas Technology Corp
|
R1LV0208BSA |
192Kb/15P |
2Mb Advanced LPSRAM (256k word x 8bit) |
R1LV0208BSA |
192Kb/15P |
2Mb Advanced LPSRAM (256k word x 8bit) |
NEC
|
UPD444016 |
101Kb/6P |
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT |
UPD434016A |
448Kb/14P |
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT |
Hitachi Semiconductor
|
HM62G36256 |
137Kb/24P |
8M Synchronous Fast Static RAM(256k-word x 36-bit) |
NEC
|
UPD43257B |
157Kb/20P |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT |
UPD43256B |
231Kb/24P |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT |
UPD444016L |
102Kb/16P |
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT |
UPD43256B |
174Kb/24P |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT |
UPD43256B |
224Kb/28P |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT |
List of Unclassifed Man...
|
MR45V256A |
267Kb/21P |
256k(32,768-Word ??8-Bit) FeRAM (Ferroelectric Random Access Memory) SPI |
LAPIS Semiconductor Co....
|
MR45V256A |
267Kb/21P |
256k(32,768-Word ??8-Bit) FeRAM (Ferroelectric Random Access Memory) SPI |
NEC
|
UPD43256B-X |
127Kb/20P |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION |
UPD444016-Y |
86Kb/16P |
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
UPD43257B |
197Kb/24P |
MOS INTEGRATED CIRCUIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT |
UPD442000A-X |
157Kb/28P |
2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION |
Toshiba Semiconductor
|
TMM23256P |
262Kb/6P |
256K BIT(32K WORD x 8 BIT) MASK ROM N-CHANNEL SILICON GATE |
NEC
|
UPD444012A-X |
143Kb/24P |
4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
Sanyo Semicon Device
|
LC35256D-10 |
108Kb/8P |
Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAM |
NEC
|
UPD444016L-Y |
87Kb/16P |
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |