Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Stanson Technology
|
D965 |
80Kb/1P |
NPN TRANSISTOR |
D2152 |
79Kb/1P |
NPN TRANSISTOR |
8550S |
89Kb/1P |
PNP TRANSISTOR |
D882 |
22Kb/1P |
PNP TRANSISTOR |
8050S |
89Kb/1P |
NPN TRANSISTOR |
B1424 |
80Kb/1P |
PNP TRANSISTOR |
8550 |
90Kb/1P |
PNP TRANSISTOR |
A733 |
80Kb/1P |
PNP TRANSISTOR |
B772 |
22Kb/1P |
PNP TRANSISTOR |
B1426 |
79Kb/1P |
PNP TRANSISTOR |
8050 |
90Kb/1P |
NPN TRANSISTOR |
C945 |
80Kb/1P |
NPN TRANSISTOR |
D2150 |
80Kb/1P |
NPN TRANSISTOR |
STC6332 |
421Kb/9P |
The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. |
ST2319SRG |
229Kb/8P |
ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. |
ST2318SRG |
221Kb/7P |
ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. |
STN4392 |
383Kb/7P |
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |
STN4480 |
742Kb/6P |
STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |
STN4850 |
532Kb/6P |
STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |
STN1810 |
966Kb/7P |
STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |