| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
NXP Semiconductors
|
BGY67A |
46Kb/7P |
200 MHz, 24 dB gain reverse amplifier
Rev. 04-14 March 2005 |
| LD6806 |
2Mb/36P |
Ultra low-dropout regulator, low noise, 200 mA
Rev. 3-9 December 2011 |
| PMEG3002EJ |
103Kb/13P |
200 mA low VF MEGA Schottky barrier rectifier
Rev. 01-15 May 2009 |
| RB520CS3002L |
204Kb/13P |
200 mA low VF MEGA Schottky barrier rectifier
25 June 2013 |
| NX3008PBKW |
883Kb/16P |
30 V, 200 mA P-channel Trench MOSFET
Rev. 1-1 August 2011 |
| BYV32E-200 |
143Kb/9P |
Dual rugged ultrafast rectifier diode, 20 A, 200 V
Rev. 04-27 February 2009 |
| BYV32EB-200 |
141Kb/9P |
Dual rugged ultrafast rectifier diode, 20 A, 200 V
Rev. 04-2 March 2009 |
| NX3008PBKS |
905Kb/17P |
30 V, 200 mA dual P-channel Trench MOSFET
Rev. 1-1 August 2011 |
| NX3020NAKV |
223Kb/14P |
30 V, 200 mA dual N-channel Trench MOSFET
29 October 2013 |
| NX3008CBKS |
1Mb/21P |
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
Rev. 1-29 July 2011 |
| PCK2023 |
177Kb/30P |
CK408 66/100/133/200 MHz spread spectrum differential system clock generator
2001 Sep 07 |
| TDA4865J |
111Kb/18P |
eflection boosters for use in vertical deflection systems for frame frequencies up to 200 Hz.
Rev. 02-3 November 2006 |
| BLA1011-200.112 |
83Kb/13P |
200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.
Rev. 08-26 October 2005 |
| LPC1850_1112 |
2Mb/157P |
32-bit ARM Cortex-M3 MCU; up to 200 kB SRAM; Ethernet, two High-speed USB, LCD, and external memory controller
Rev. 3-6 December 2011 |
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