Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
STMicroelectronics
|
SD1888-03 |
42Kb/4P |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
SD1893-03 |
42Kb/5P |
RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS |
SD1895-03 |
45Kb/4P |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
SD1898 |
45Kb/4P |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
SD1891-03 |
66Kb/5P |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
STP6NB80 |
44Kb/6P |
N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP September 1998 |
VG5761 |
2Mb/5P |
Automotive 1.6 - 2.3 megapixel high-dynamic global shutter image sensor November 2018 Rev 3 |
ST16010 |
1Mb/12P |
10 W, 28 V, HF to 1.6 GHz RF Power LDMOS transistor May 2021 Rev 3 |
RF2L16180CB4 |
2Mb/12P |
180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor April 2021 Rev 2 |
STD2NK70Z |
457Kb/16P |
N-channel 700V - 6廓 - 1.6 A - DPAK/IPAK Zener protected SuperMESH??Power MOSFET |
STD2NK70Z |
305Kb/12P |
N-CHANNEL 700 V - 6 W - 1.6 A DPAK/IPAK Zener-Protected SuperMESHTM MOSFET |
STB270N4F3 |
804Kb/14P |
N-channel 40 V, 1.6 m廓, 160 A, D2PAK, I2PAK STripFET??III Power MOSFET |
STD3NM60N |
909Kb/15P |
N-channel 600 V, 1.6 廓, 3.3 A, MDmesh??II Power MOSFET in DPAK package |
STL3N65M2 |
318Kb/13P |
N-channel 650 V, 1.6 typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3x3.3 HV package May 2022 Rev 4 |
STIPQ3M60T-HZS |
1,017Kb/23P |
SLLIMM-nano 2nd series IPM, 3-phase inverter, 3 A, 1.6 max., 600 V, N‑channel MDmesh DM2 Power MOSFET May 2021 Rev 1 |
STK184N4F7AG |
447Kb/13P |
Automotive-grade N-channel 40 V, 1.6 mΩ typ., 100 A, STripFET™ F7 Power MOSFET in an LFPAK 5x6 package January 2019 Rev 2 |