Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
ON Semiconductor
|
NUF4402MN |
61Kb/4P |
Low Capacitance 4 Line EMI Filter with ESD Protection in DFN8 1.6 x 1.6 mm Package June, 2005 ??Rev. 2 |
NUF4210MN |
57Kb/4P |
Low Capacitance 4 Line EMI Filter with ESD Protection in DFN8 1.6 x 1.6 mm Package August, 2005 ??Rev. 0 |
NVCR4LS1D6N10MCA |
169Kb/6P |
MOSFET – Power, N-Channel 100 V, 1.6 m August, 2022 - Rev. 0 |
NTLUF4189NZ |
154Kb/8P |
Power MOSFET and Schottky Diode 30 V, N?묬hannel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm Cool Package March, 2009 ??Rev. 1 |
NTMFS5C612N |
178Kb/7P |
MOSFET ??Power, Single, N-Channel 60 V, 1.6 m, 230 A June, 2021 ??Rev. 3 |
NVMYS1D6N04CL |
235Kb/7P |
MOSFET - Power, Single N-Channel 40 V, 1.6 m, 185 A September, 2021 ??Rev.2 |
FDN5632N-F085 |
581Kb/7P |
N-Channel Logic Level PowerTrench짰 MOSFET 60 V, 1.6 A, 98 m廓 September-2017, Rev. 2 |
NCS21801 |
187Kb/13P |
Precision Operational Amplifier, 10 V, Zero-Drift, 1.6 V to 5.5 V Supply, 1.5 MHz April, 2020 ??Rev. P1 |
NCS21801 |
942Kb/28P |
Precision Operational Amplifier, 10 V, Zero-Drift, 1.6 V to 5.5 V Supply, 1.5 MHz March, 2022 - Rev. 7 |
NCP1532 |
364Kb/16P |
Dual Output Step-Down Converter 2.25 MHz High-Efficiency, Out of Phase Operation, Low Quiescent Current, Source up to 1.6 A June, 2010 ??Rev. 5 |
NCP1532 |
383Kb/16P |
Dual Output Step-Down Converter 2.25 MHz High-Efficiency, Out of Phase Operation, Low Quiescent Current, Source up to 1.6 A October, 2011 ??Rev. 6 |